| PART |
Description |
Maker |
| BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| MPX10GP MPX10GVP MPX10 MPX10D MPX10DP MPX10GS MPX1 |
0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) 00千帕-1.45 PSI）的35压全尺寸跨度（典型）
0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) GAGE, PEIZORESISTIVE PRESSURE SENSOR, 0-1.45Psi, 1%, 20-80mV, THROUGH HOLE MOUNT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| IRF7321D2 |
FETKY? MOSFET / Schottky Diode
|
International Rectifier
|
| IRF7321D2 |
FETKY MOSFET & Schottky Diode
|
IRF[International Rectifier]
|
| IRF7342D2 |
FETKY MOSFET & Schottky Diode
|
International Rectifier
|
| IRF7807D2TRPBF |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| IRF7807D1PBF |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| IRF7353D2TRPBF |
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| IRF7322D1TRPBF |
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
